 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE2383 MOSFET P-Channel Enhancement Mode, High Speed Switch (Compl to NTE2382) Description: The NTE2383 is a MOS power P-Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: Drain-Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain-Gate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Drain Current, Pulsed (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A Gate Current, Pulsed, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Single Pulsed Avalanvhe Energy (Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/C Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67C/W Thermal Resistance, Case-to-Sink (Note 5), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5C/W Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +300C Note Note Note Note Note 1. 2. 3. 4. 5. TJ = +25 to +150C Pulse Test: Pulse Width 300s, Duty Cycle 2%. Repetitive rating: Pulse width limited by max. junction temperature. L = 8.5mH, VDD = 25V, RG = 25, Starting TJ = +25C. Mounting surface flat, smooth, and greased. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Symbol IDSS IGSS IGSS VGS(th) rDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Note 3 TJ = +25C, IS = 10.5A, VGS = 0V, Note 2 TJ = +25C, IF = 10.5A, dIF/dt = 100A/s VGS = 10V, VDS = 80V, ID = 10.5A, Gate charge is essentially independent of operating temperature VDD = 50V, ID = 10.5A, ZO = 24, MOSFET switching times are essentially independent of operating temperature Test Conditions VDS = 100V, VGS = 0 VDS = 80V, VGS = 0, TJ = +125C VGS = 20V VGS = 20V VDS = VGS, ID = 0.25mA VGS = 10V, ID = 5.3A, Note 2 VDS 50V, ID = 5.3A, Note 2 VDS = 25V, VGS = 0, f = 1MHz Min 100 - - - - 2.0 - 2.0 - - - - - - - - - - - - - - Typ - - - - - - - - 835 357 94 - - - - - 12.6 16.6 - - - - Max - 0.25 1.0 100 -100 4.0 0.3 - - - - 60 140 140 140 58 - - 10.5 42 6.3 300 Unit V mA mA nA nA V mhos pF pF pF ns ns ns ns nC nC ns A A V ns V(BR)DSS VGS = 0, ID = 0.25mA Source-Drain Diode Ratings and Characteristics Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab |
Price & Availability of NTE2383
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |